Materials science-based device performance engineering for metal gate high-k CMOS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 53-56

  Toriumi, A ^a,b   Kita, K ^a   Tomida, K ^a   Zhao, Y ^a   Widiez, J ^a   Nabatame, T ^c   Ota, H ^b   Hirose, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON DEVICES; MATERIALS; MATERIALS SCIENCE; METALS; SULFATE MINERALS; TECHNOLOGY;

DEVICE ENGINEERING; DEVICE PERFORMANCES; INTEGRATION TECHNIQUES; INVERSION LAYER MOBILITY; METAL GATES; PLANAR DEVICE STRUCTURES;

GROWTH (MATERIALS);

EID: 50249111598     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418861     Document Type: Conference Paper

References (20)

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