In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 72-75

  Dadgar, A ^a   Schulze, F ^a   Zettler, T ^b   Haberland, K ^b   Clos, R ^a   Strassburger G ^a   Blasing J ^a   Diez, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

A1. Doping; A1. In situ characterization; A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SILICON; TEMPERATURE MEASUREMENT; TENSILE STRESS;

GROWTH TEMPERATURE; HETEROEPITAXY; IN SITU MEASUREMENTS; WAFER CURVATURE;

GALLIUM NITRIDE;

EID: 9944225536     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.031     Document Type: Conference Paper

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