Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes

Journal of Physics D: Applied Physics

Volumn 43, Issue 33, 2010, Pages

  Pereiro, J ^a   Redondo Cubero, A ^a,b   Fernandez Garrido, S ^a   Rivera, C ^a   Navarro, A ^a   Munoz E ^a   Calleja, E ^a   Gago, R ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CENTRO DE MICROANÁLISIS DE MATERIALES   (Spain)

^c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ACTIVATION; BACK-ILLUMINATED; BAND PASS; FLUORESCENCE MEASUREMENTS; MG-DOPED; MG-DOPING; OPTICAL MEASUREMENT; PHOTORESPONSES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RECTIFYING PROPERTIES; REJECTION RATIOS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY-BARRIER PHOTODIODE;

ACTIVATION ENERGY; DISTILLATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; FABRICATION; FLUORESCENCE; HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL DATA PROCESSING; PHOTODIODES; SCHOTTKY BARRIER DIODES; SECONDARY BATTERIES;

GALLIUM;

EID: 77957129774     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/33/335101     Document Type: Article

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