Effect of growth conditions on the conductivity of Mg doped p-type GaN by molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1074-1077

  Simon, John ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE STUDIES; DOPING; GAN LAYERS; GROWTH CONDITIONS; HETEROSTRUCTURE; LOW HOLE MOBILITIES; MEMORY EFFECTS; MG DOPED; MG FLUXES; MOLECULAR-BEAM EPITAXIES; ORGANIC CHEMICAL VAPOR DEPOSITIONS; P-N JUNCTIONS; PRECISE;

BIPOLAR TRANSISTORS; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WIRES; TRANSISTORS;

HOLE MOBILITY;

EID: 54849411308     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778745     Document Type: Article

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