Growth of InGaN HBTs by MOCVD

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 695-700

  Chung, Theodore ^a   Limb, Jae ^a   Ryou, Jae Hyun ^a   Lee, Wonseok ^a   Li, Peng ^a   Yoo, Dongwon ^a   Zhang, Xue Bing ^a   Shen, Shyh Chiang ^a   Dupuis, Russell D ^a   Keogh, David ^b   Asbeck, Peter ^b   Chukung, Ben ^c   Feng, Milton ^c   Zakharov, Dimitri ^d   Lilienthal Weber, Zusanne ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Gallium nitride (GaN); Heterojunction bipolar transistor (HBT); InGaN; Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

EMITTER MESA ETCH; GROWTH PRESSURE; SURFACE ETCHING; V-SHAPED DEFECTS;

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; ETCHING; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

INDIUM COMPOUNDS;

EID: 33646515474     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0123-z     Document Type: Conference Paper

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