Mg doping of GaN by molecular beam epitaxy

Journal of Physics D: Applied Physics

Volumn 44, Issue 13, 2011, Pages

  Lieten, R R ^a,b,c   Motsnyi, V ^b   Zhang, L ^b   Cheng, K ^b   Leys, M ^b   Degroote, S ^b   Buchowicz, G ^a   Dubon, O ^a   Borghs, G ^b,c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; FLUX RATIO; GA FLUX; GA-RICH CONDITIONS; GAN LAYERS; GAN: MG; GROWTH CONDITIONS; HALL EFFECT MEASUREMENT; HIGH QUALITY; HIGHLY SENSITIVE; MG CONCENTRATIONS; MG FLUX; MG INCORPORATION; MG-DOPED; MG-DOPING; P-TYPE DOPING; P-TYPE GAN; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SYSTEMATIC STUDY; TEMPERATURE DEPENDENT;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GROWTH TEMPERATURE; HALL EFFECT; HOLE CONCENTRATION; HOLE MOBILITY; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTIMIZATION;

GALLIUM NITRIDE;

EID: 79952923050     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/13/135406     Document Type: Article

References (23)

1. Cai X-M, Zeng S-W and Zhang B-P 2009 Appl. Phys. Lett. 95 173504
2. Jani O, Ferguson I, Honsberg C and Kurtz S 2007 Appl. Phys. Lett. 91 132117
3. Zheng X, Horng R-H, Wuu D-S, Chu M-T, Liao W-Y, Wu M-H, Lin R-M and Lu Y-C 2008 Appl. Phys. Lett. 93 261108
4. Reichertz L A, Gherasoiu I, Yu K M, Kao V M, Walukiewicz W and Ager J W 2009 Appl. Phys. Express 2 122202
5. Smorchkova I P, Haus E, Heying B, Kozodoy P, Fini P, Ibbetson J P, Keller S, DenBaars S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 76 718
6. Akasaki I 2007 J. Cryst. Growth 300 2
7. Monroy E, Andreev T, Holliger P, Bellet-Amalric E, Shibata T, Tanaka M and Daudin B 2004 Appl. Phys. Lett. 84 2554
8. Kaufmann U, Schlotter P, Obloh H, Kohler K and Maier M 2000 Phys. Rev. B 62 10867
9. Ramachandran V, Feenstra R M, Sarney W L, Salamanca-Riba L, Northrup J E, Romano L T and Greve D W 1999 Appl. Phys. Lett. 75 808
10. Dussaigne A, Damilano B, Brault J, Massies J, Feltin E and Grandjean N 2008 J. Appl. Phys. 103 013110
11. Nakamura S, Senoh M and Mukai T 1991 Japan. J. Appl. Phys. 30 L1708
12. Namkoong G, Trybus E, Lee K K, Moseley M, Doolittle W A and Look D C 2008 Appl. Phys. Lett. 93 172112
13. Liu L and Edgar J H 2002 Mater. Sci. Eng. R 37 61
14. Cheng K, Leys M, Derluyn J, Balachander K, Degroote S, Germain M and Borghs G 2008 Phys. Status Solidi c 5 1600
15. Nakamura S, Mukai T, Senoh M and Iwasa N 1992 Japan. J. Appl. Phys. 31 L139
16. Simon J and Jena D 2008 Phys. Status Solidi a 205 1074
17. Van de Walle C G, Stampfl C and Neugebauer J 1998 J. Cryst. Growth 189-190 505
18. Gotz W, Kern R S, Chen C H, Liu H, Steigerwald D A and Fletcher R M 1999 Mater. Sci. Eng. B 59 211
19. Neamen D A 2003 Semiconductor Physics and Devices: Basic Principles 3rd edn (New York: McGraw-Hill) p 129
20. Suzuki M, Uenoyama T and Yanase A 1995 Phys. Rev. B 52 8132
21. Kozodoy P, Xing H, DenBaars S P, Mishra U K, Saxler A, Perrin R, Elhamri S and Mitchel W C 2000 J. Appl. Phys. 87 1832
22. Nakayama H, Hacke P, Khan M R H, Detchprohm T, Hiramatsu K and Sawaki N 1996 Japan. J. Appl. Phys. Part 2 35 L282
23. Naranjo F B, Calleja E, Bougrioua Z, Trampert A, Kong X and Ploog K H 2004 J. Cryst. Growth 270 542