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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

(4) Zhang, Meng a Bhattacharya, Pallab a Guo, Wei a Banerjee, Animesh a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; CONTACT LAYERS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DOPING EFFICIENCY; DOPING LEVELS; HALL MEASUREMENTS; HIGH GROWTH TEMPERATURES; INGAN/GAN; MG FLUX; MG-DOPED; MG-DOPING; OPTICAL QUALITIES; P-DOPING; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM-DOT LIGHT EMITTING DIODES; RICH CONDITIONS; ROOM TEMPERATURE; SERIES RESISTANCES;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE MOBILITY; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN PLASMA; PHYSICAL OPTICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY;

DOPING (ADDITIVES);

EID: 77950514128 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374882 Document Type: Article

Times cited : (41)

References (14)

1
- 63349104023
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2008.12.040
- C. Skierbiszewski, Z. R. Wasilewski, I. Grzegory, and S. Porowski, J. Cryst. Growth JCRGAE 0022-0248 311, 1632 (2009). 10.1016/j.jcrysgro.2008.12.040
- (2009) J. Cryst. Growth , vol.311 , pp. 1632
- Skierbiszewski, C.¹ Wasilewski, Z.R.² Grzegory, I.³ Porowski, S.⁴

2
- 2442545534
- EDLEDZ 0741-3106,. 10.1109/LED.2004.826977
- S. Rajan, P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 247 (2004). 10.1109/LED.2004.826977
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 247
- Rajan, S.¹ Waltereit, P.² Poblenz, C.³ Heikman, S.J.⁴ Green, D.S.⁵ Speck, J.S.⁶ Mishra, U.K.⁷

3
- 0037098087
- Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
- DOI 10.1063/1.1471923
- C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, G. Mula, and B. Daudin, J. Appl. Phys. JAPIAU 0021-8979 91, 9638 (2002). 10.1063/1.1471923 (Pubitemid 34720087)
- (2002) Journal of Applied Physics , vol.91 , Issue.12 , pp. 9638
- Adelmann, C.¹ Brault, J.² Jalabert, D.³ Gentile, P.⁴ Mariette, H.⁵ Mula, G.⁶ Daudin, B.⁷

4
- 0011796924
- JAPIAU 0021-8979,. 10.1063/1.1305830
- B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 88, 1855 (2000). 10.1063/1.1305830
- (2000) J. Appl. Phys. , vol.88 , pp. 1855
- Heying, B.¹ Averbeck, R.² Chen, L.F.³ Haus, E.⁴ Riechert, H.⁵ Speck, J.S.⁶

5
- 0000397043
- APPLAB 0003-6951,. 10.1063/1.125872
- I. P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J. P. Ibbetson, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. APPLAB 0003-6951 76, 718 (2000). 10.1063/1.125872
- (2000) Appl. Phys. Lett. , vol.76 , pp. 718
- Smorchkova, I.P.¹ Haus, E.² Heying, B.³ Kozodoy, P.⁴ Fini, P.⁵ Ibbetson, J.P.⁶ Keller, S.⁷ Denbaars, S.P.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

6
- 21044452162
- Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
- DOI 10.1016/j.jcrysgro.2005.01.004, PII S0022024805000059, 13th International Conference on Molecular Beam Epitaxy
- A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z. R. Wasilewski, I. Sproule, S. Grzanka, R. Jakiea, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. Boćkowski, and S. Porowski, J. Cryst. Growth JCRGAE 0022-0248 278, 443 (2005). 10.1016/j.jcrysgro.2005.01.004 (Pubitemid 40643389)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 443-448
- Feduniewicz, A.¹ Skierbiszewski, C.² Siekacz, M.³ Wasilewski, Z.R.⁴ Sproule, I.⁵ Grzanka, S.⁶ Jakiela, R.⁷ Borysiuk, J.⁸ Kamler, G.⁹ Litwin-Staszewska, E.¹⁰ Czernecki, R.¹¹ Bockowski, M.¹² Porowski, S.¹³

7
- 19144368536
- Efficient p -type doping of GaN films by plasma-assisted molecular beam epitaxy
- DOI 10.1063/1.1826223
- A. Bhattacharyya, W. Li, J. Cabalu, T. D. Moustakas, D. J. Smith, and R. L. Hervig, Appl. Phys. Lett. APPLAB 0003-6951 85, 4956 (2004). 10.1063/1.1826223 (Pubitemid 40715180)
- (2004) Applied Physics Letters , vol.85 , Issue.21 , pp. 4956-4958
- Bhattacharyya, A.¹ Li, W.² Cabalu, J.³ Moustakas, T.D.⁴ Smith, D.J.⁵ Hervig, R.L.⁶

8
- 36549047909
- High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy
- DOI 10.1063/1.2817597
- G. Koblmüller, F. Wu, T. Mates, J. S. Speck, S. Fernández- Garrido, and E. Calleja, Appl. Phys. Lett. APPLAB 0003-6951 91, 221905 (2007). 10.1063/1.2817597 (Pubitemid 350191616)
- (2007) Applied Physics Letters , vol.91 , Issue.22 , pp. 221905
- Koblmuller, G.¹ Wu, F.² Mates, T.³ Speck, J.S.⁴ Fernandez-Garrido, S.⁵ Calleja, E.⁶

9
- 0035484298
- JECMA5 0361-5235,. 10.1007/s11664-001-0122-z
- H. Kim, F. J. Fälth, and T. G. Andersson, J. Electron. Mater. JECMA5 0361-5235 30, 1343 (2001). 10.1007/s11664-001-0122-z
- (2001) J. Electron. Mater. , vol.30 , pp. 1343
- Kim, H.¹ Fälth, F.J.² Andersson, T.G.³

10
- 0000382834
- SUSCAS 0039-6028,. 10.1016/0039-6028(64)90024-X
- J. J. Lander, Surf. Sci. SUSCAS 0039-6028 1, 125 (1964). 10.1016/0039-6028(64)90024-X
- (1964) Surf. Sci. , vol.1 , pp. 125
- Lander, J.J.¹

11
- 28644434565
- Substitutional and interstitial oxygen in wurtzite GaN
- DOI 10.1063/1.2137446, 103531
- A. F. Wright, J. Appl. Phys. JAPIAU 0021-8979 98, 103531 (2005). 10.1063/1.2137446 (Pubitemid 41751717)
- (2005) Journal of Applied Physics , vol.98 , Issue.10 , pp. 1-9
- Wright, A.F.¹

12
- 13644274232
- Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
- DOI 10.1063/1.1853530, 041908
- G. Koblmüller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 86, 041908 (2005). 10.1063/1.1853530 (Pubitemid 40232170)
- (2005) Applied Physics Letters , vol.86 , Issue.4 , pp. 0419081-0419083
- Koblmuller, G.¹ Brown, J.² Averbeck, R.³ Riechert, H.⁴ Pongratz, P.⁵ Speck, J.S.⁶

13
- 44149111815
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2008.03.030
- R. Garcia, A. C. Thomas, and F. A. Ponce, J. Cryst. Growth JCRGAE 0022-0248 310, 3131 (2008). 10.1016/j.jcrysgro.2008.03.030
- (2008) J. Cryst. Growth , vol.310 , pp. 3131
- Garcia, R.¹ Thomas, A.C.² Ponce, F.A.³

14
- 67649798213
- JAPIAU 0021-8979,. 10.1063/1.3065274
- Y. -R. Wu, Y. -Y. Lin, H. -H. Huang, and J. Singh, J. Appl. Phys. JAPIAU 0021-8979 105, 013117 (2009). 10.1063/1.3065274
- (2009) J. Appl. Phys. , vol.105 , pp. 013117
- Wu, Y.-R.¹ Lin, Y.-Y.² Huang, H.-H.³ Singh, J.⁴

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