Mg doped GaN using a valved, thermally energetic source: Enhanced incorporation, and control

Journal of Crystal Growth

Volumn 279, Issue 1-2, 2005, Pages 26-30

  Burnham, Shawn D ^a   Namkoong, Gon ^a   Henderson, Walter ^a   Doolittle, W Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

DOPING (ADDITIVES); GROWTH (MATERIALS); MAGNESIUM PRINTING PLATES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITRIDES; SATURATION (MATERIALS COMPOSITION); SECONDARY ION MASS SPECTROMETRY; TEMPERATURE MEASUREMENT;

HOLE CONCENTRATION; THERMAL CRACKER; THERMAL ENERGY; THERMALLY ENERGETIC SOURCES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17744383764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.001     Document Type: Article

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