Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN

Current Applied Physics

Volumn 12, Issue 6, 2012, Pages 1536-1540

  Han, T ^a   Shi, Y ^a   Wu, H ^a   Liu, C ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Aluminum doped zinc oxide; Gallium nitride; Schottky contacts

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITING TEMPERATURE; ELECTRON BEAM EVAPORATION; HALL EFFECT MEASUREMENT; LINEAR CURVE; RECTIFYING CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; THERMIONIC EMISSION THEORY;

ALUMINUM; CARRIER CONCENTRATION; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; ZINC OXIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84863984230     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.04.029     Document Type: Article

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