Hydrogen-sensitive GaN Schottky diodes

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 1069-1073

  Kim, Jihyun ^a   Gila, B P ^b   Chung, G Y ^c   Abernathy, C R ^b   Pearton, S J ^b   Ren, F ^a  

^a University of Florida   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c Sterling Semiconductor   (United States)

Author keywords

Diodes; GaN; Gas sensors; Schottky

Indexed keywords

DIFFUSION; DISSOCIATION; ELECTRIC CURRENTS; GALLIUM NITRIDE; HYDROGEN; INTERFACES (MATERIALS); SENSORS; TEMPERATURE MEASUREMENT;

FORWARD BIAS;

SCHOTTKY BARRIER DIODES;

EID: 0037408989     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00485-9     Document Type: Article

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