Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

Electronics Letters

Volumn 39, Issue 22, 2003, Pages 1604-1606

  Jiang, H ^a   Egawa, T ^a   Ishikawa, H ^a   Dou, Y B ^a   Shao, C L ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; GALLIUM NITRIDE; IRIDIUM COMPOUNDS; METALLIZING; OXIDATION; OXYGEN;

BARRIER HEIGHT;

PHOTODIODES;

EID: 0242721380     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031039     Document Type: Article

References (5)

1. CHEN, Q., YANG, J.W., OSINSKY, A., GANGOPADHYAY, S., LIM, B., ANWAR, M.Z., KHAN, M.A., KUKSENKOV, D., and TEMKIN, H.: 'Schottky barrier detectors on GaN for visible-blind ultraviolet detection', Appl. Phys. Lett., 1997, 70, pp. 2277-2279
2. BIYIKLI, N., KARTALOGLU, T., AYTUR, O., KIMUKIN, I., and OZBAY, E.: 'High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes', Appl. Phys. Lett., 2001, 79, pp. 2838-2812
3. JANG, H.W., and LEE, J.L.: 'Transparent ohmic contacts of oxidized Ru and Ir on p-type GaN', J. Appl. Phys., 2003, 93, pp. 5416-5421
4. BRUTSCHER, N., and HOHEISEL, M.: 'Schottky diodes with high series resistance: a simple method of determining the barrier heights', Solid-State Electron., 1988, 31, pp. 87-89
5. 0.70N p-i-n photodiodes', Appl. Phys. Lett., 2000, 77, pp. 2810-2812