Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 435-438

  Lee, Jong Lam ^a   Kim, Jong Kyu ^a   Lee, Jae Won ^b   Park, Yong Jo ^b   Kim, Taeil ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; EPITAXIAL GROWTH; OHMIC CONTACTS; SURFACE TREATMENT;

METAL DEPOSITION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033079415     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00265-2     Document Type: Article

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