Improved properties of Al-doped ZnO film by electron beam evaporation technique

Microelectronics Journal

Volumn 38, Issue 2 SPEC. ISS., 2007, Pages 245-250

  Sahu, D R ^a   Lin, Shin Yuan ^a   Huang, Jow Lay ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Al doped ZnO; Electron beam evaporation; Optical and electrical properties

Indexed keywords

ALUMINUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON BEAMS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; ZINC OXIDE;

AL-DOPED ZNO; ELECTRON BEAM EVAPORATION; GROWTH TEMPERATURE; TRANSMITTANCE MEASUREMENT;

THIN FILMS;

EID: 33846615556     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.11.005     Document Type: Article

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