Temperature- and field-dependent leakage current of epitaxial YMnO3 /GaN heterostructure

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Wu, H ^a   Yuan, J ^b   Peng, T ^a   Pan, Y ^a   Han, T ^a   Liu, C ^a,c  

^a WUHAN UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUBE DIODES; EPITAXIAL FILMS; FERROELECTRIC FILMS; GALLIUM NITRIDE; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

APPLIED VOLTAGES; EPITAXIAL FERROELECTRICS; FIELD DEPENDENCES; FOWLER-NORDHEIM TUNNELING; GAN SUBSTRATES; HETEROSTRUCTURE; HIGH FIELDS; LEAKAGE MECHANISMS; LOW FIELDS; LOW TEMPERATURE REGIONS; OHMIC BEHAVIORS; PULSED LASERS; SCHOTTKY BARRIERS; SPACE-CHARGE-LIMITED CURRENTS; TEMPERATURE RANGES;

GALLIUM ALLOYS;

EID: 63549118703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106635     Document Type: Article

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