High-power InGaN light emitting diodes grown by molecular beam epitaxy

Electronics Letters

Volumn 40, Issue 20, 2004, Pages 1299-1300

  Johnson, K ^a   Bousquet, V ^a   Hooper, S E ^a   Kauer, M ^a   Zellweger, C ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DOPING (ADDITIVES); HALL EFFECT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTOR LASERS;

DISLOCATION DENSITY; SURFACE ELECTRODES; THERMAL EVAPORATION; ULTRA-HIGH VACUUM (UHV);

INDIUM COMPOUNDS;

EID: 6444242968     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046144     Document Type: Article

References (9)

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