Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 311, Issue 15, 2009, Pages 3817-3823

  Cruz, Samantha C ^a   Keller, Stacia ^a   Mates, Thomas E ^a   Mishra, Umesh K ^a   DenBaars, Steven P ^a  

^a Santa Barbara   (United States)

Author keywords

A1. Crystallographic orientation; A1. Doping; A1. Impurities; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

A1. CRYSTALLOGRAPHIC ORIENTATION; A1. DOPING; A1. IMPURITIES; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES;

DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM NITRIDE; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; VAPOR DEPOSITION; VAPORS;

GALLIUM ALLOYS;

EID: 67650345428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.02.051     Document Type: Article

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