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Applied Physics Letters

Volumn 96, Issue 18, 2010, Pages

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers

(9) Das, A a Magalhaes S b Kotsar, Y a Kandaswamy, P K a Gayral, B a Lorenz, K b Alves, E b Ruterana, P c Monroy, E a

a CEA GRENOBLE (France)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

c Direction de la Recherche Fondamentale (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; CRYSTALLOGRAPHIC ORIENTATIONS; GROWTH WINDOW; OPTIMUM GROWTH CONDITIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SEMIPOLAR; SUBSTRATE TEMPERATURE;

CRYSTAL GROWTH; GALLIUM; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

GROWTH KINETICS;

EID: 77952836951 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427310 Document Type: Article

Times cited : (30)

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