InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 361-366

  Hooper, S E ^a   Kauer, M ^a   Bousquet, V ^a   Johnson, K ^a   Zellweger, C ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes; B3. Light emitting diodes

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL SYSTEMS; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HIGH-DENSITY OPTICAL STORAGE SYSTEMS; PULSED CURRENT INJECTION; ROOM TEMPERATURE; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR LASERS;

EID: 18444376791     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.049     Document Type: Conference Paper

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