InN and ln 1-XGa X N: Calculation of hall mobilities and effects of alloy disorder and dislocation scatterings

Materials Science in Semiconductor Processing

Volumn 15, Issue 4, 2012, Pages 347-352

  Aydogu, Senem ^a   Akarsu, Mustafa ^b   Ozbas, Omer ^b  

^a DUMLUPINAR UNIVERSITY   (Turkey)

^b ESKISEHIR OSMANGAZI UNIVERSITY   (Turkey)

Author keywords

Alloy scattering; Dislocation mobility; Semiconductor alloys

Indexed keywords

ALLOY DISORDER; ALLOY DISORDER SCATTERING; ALLOY SCATTERING; DISLOCATION DENSITIES; DISLOCATION MOBILITY; DISLOCATION SCATTERING; EFFECT OF DISLOCATIONS; SCATTERING MECHANISMS; SEMI-CONDUCTOR ALLOYS; TEMPERATURE RANGE;

CERIUM ALLOYS; GALLIUM; HALL MOBILITY; SCATTERING; SINGLE CRYSTALS;

GALLIUM ALLOYS;

EID: 84863322091     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.11.001     Document Type: Article

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