Nucleation and growth of InN by high-pressure chemical vapor deposition: Optical monitoring

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1790-1794

  Woods, Vincent ^a   Senawirante, Jayantha ^a   Dietz, Nikolaus ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGE; ATOMIC NITROGEN; GROWTH PROCESS; SUBMONOLAYER LEVEL;

ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; HIGH PRESSURE EFFECTS; MOLECULAR BEAM EPITAXY; NUCLEATION; STOICHIOMETRY; ULTRAVIOLET SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31144440745     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1943444     Document Type: Article

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