Temperature dependent transport properties in GaN, AlxGa1-xN, and InxGa1-xN semiconductors

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 567-572

  Anwar, A F M ^a   Wu, S ^a   Webster, R T ^a  

^a University of Connecticut   (United States)

Author keywords

AlGaN; Electron transport; InGaN

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ELECTRON SATURATION VELOCITY; LOW-FIELD MOBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035279218     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906452     Document Type: Article

References (15)

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14. GaN, AlN, and InN: A review
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