Self-consistent scattering analysis of Al0.2Ga 0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

Journal of Physics Condensed Matter

Volumn 20, Issue 4, 2008, Pages

  Lisesivdin, S B ^a   Arslan, E ^b   Kasap, M ^a   Ozcelik, S ^a   Ozbay, E ^b  

^a GAZI UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; MAGNETIC FIELDS; SCATTERING; SPECTRUM ANALYSIS; TEMPERATURE DISTRIBUTION;

QUANTITATIVE MOBILITY SPECTRUM ANALYSIS (QMSA); ROUGHNESS PARAMETERS;

HETEROJUNCTIONS;

EID: 43049088503     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/04/045208     Document Type: Article

References (31)

1. Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
2. Khan M A, Shur M S, Kuznia J N, Chen Q, Burn J and Schaff W 1995 Appl. Phys. Lett. 66 1083
3. Koide N, Kato H, Sassa M, Yamasaki S, Manabe K, Hashimoto M, Amano H, Hiramatsu K and Akasaki I 1991 J. Cryst. Growth 115 636
4. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M and Chocho K 1998 Appl. Phys. Lett. 72 211
5. Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
6. Khan M A, Chen Q, Yang J W, Shur M S, Dermott B T and Higgins J A 1996 IEEE Electron Device Lett. 17 325
7. Sheppard S T, Doverspike K, Pribble W L, Allen S T, Palmour J W, Kehias L T and Jenkins T J 1999 IEEE Trans. Electron Device Lett. 20 161
8. Inoue Y, Masuda S, Kanamura M, Ohki T, Makiyama K, Okamoto N, Imanishi K, Kikkawa T, Hara N, Shigematsu H and Joshin K 2007 Microwave Symp., IEEE/MTT-S Int. p639
9. Gokden S 2004 Physica E 23 114
10. Wetzel C, Walukiewicz W, Haller E, Ager J, Grzegory I, Porowski S and Suski T 1996 Phys. Rev. B 53 1322
11. Neugebauer J and Van de Walle C 1996 Appl. Phys. Lett. 69 503
12. Lisesivdin S B, Yildiz A and Kasap M 2007 Optoelectron. Adv. Mater. Rapid Commun. 1 467
13. Antoszewski J, Faraone L, Vurgaftman I, Meyer J R and Hoffman C A 2004 J. Electron Mater. 33 673
14. Swartz C H, Tomkins R P, Giles N C, Myers T H, Lu H, Schaff W J and Eastman L F 2004 J. Cryst. Growth 269 29
15. Swartz C H, Tomkins R P, Myers T H, Look D C and Sizelove J R 2005 J. Electron. Mater. 33 412
16. Biyikli N, Xie J, Moon Y-T, Yun F, Stefanita C-G, Bandyopadhyay S, Morkoç H, Vurgaftman I and Meyer J R 2006 Appl. Phys. Lett. 88 142106
17. Vurgaftman I, Meyer J R, Hoffman C A, Redfern D, Antoszewski J, Faraone L and Lindemuth J R 1998 J. Appl. Phys. 84 4966
18. Lisesivdin S B, Yildiz A, Acar S, Kasap M, Ozcelik S and Ozbay E 2007 Appl. Phys. Lett. 91 102113
19. Ridley B K 1982 J. Phys. C: Solid State Phys. 15 5899
20. Ridley B K, Foutz B E and Eastman L F 1999 Phys. Rev. B 61 16862
21. Hess K 1979 Appl. Phys. Lett. 35 484
22. Zanato D, Gokden S, Balkan N, Ridley B K and Schaff W J 2004 Semicond. Sci. Technol. 19 427
23. Lisesivdin S B, Acar S, Kasap M, Ozcelik S, Gokden S and Ozbay E 2007 Semicond. Sci. Technol. 22 543
24. Kearney M J and Horrell A I 1998 Semicond. Sci. Technol. 13 174
25. Li J Z, Lin J Y, Jiang H X, Khan M A and Chen Q 1997 J. Appl. Phys. 82 1227
26. Babinski A, Li G and Jagadish C 1997 Appl. Phys. Lett. 71 1664
27. Li J Z, Lin J Y, Jiang H X, Khan M A and Chen Q 1997 J. Vac. Sci. Technol. 15 1117
28. Wang W, Chua S J and Li G 2000 J. Electron. Mater. 29 27
29. Paesler M A and Queisser H J 1978 Phys. Rev. B 17 2625
30. Hayne M, Usher A, Harris J J, Moshchalkov V V and Foxon C T 1998 Phys. Rev. B 57 14813
31. Zhang G Y, Tong Y Z, Yang Z J, Jin S X, Li J and Gan Z Z 1997 Appl. Phys. Lett. 71 3376