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Volumn 48, Issue 1, 2006, Pages 93-97

Electron transport in InN layers grown by plasma-assisted molecular beam epitaxy

Author keywords

Defects and impurities; Electron scattering mechanism; n InN

Indexed keywords


EID: 32044466514     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (28)
  • 15
    • 0004057052 scopus 로고
    • editted by R. K. Willardson and A. C. Beer (Academic, New York), Chap. 1
    • D. L. Rode, in Semiconductors and Semimetals, editted by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, Chap. 1.
    • (1975) Semiconductors and Semimetals , vol.10
    • Rode, D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.