Localized states in Inx Ga1 - x N epitaxial film

Solid State Communications

Volumn 149, Issue 1-2, 2009, Pages 18-20

  Chang, H S ^a   Hsu, T M ^a   Chuang, T F ^a   Chen, W Y ^a   Gwo, S ^b   Shen, C H ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A. InxGa1 xN; D. Localized states; E. Photoluminescence

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON ENERGY LEVELS; EPITAXIAL FILMS; EPITAXIAL GROWTH; INDIUM; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

A. INXGA1-XN; BACKGROUND EMISSIONS; D. LOCALIZED STATES; E. PHOTOLUMINESCENCE; ENERGY STATES; EXPERIMENTAL DATUMS; INDIUM CONCENTRATIONS; LINE EMISSIONS; LOCALIZED STATES; N CLUSTERS; SI(111) SUBSTRATES; TIME-RESOLVED;

LUMINESCENCE;

EID: 56349104058     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.10.028     Document Type: Article

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