Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

Applied Physics A: Materials Science and Processing

Volumn 99, Issue 1, 2010, Pages 139-143

  Liu, B ^a   Zhang, Z ^a   Zhang, R ^a   Fu, D Y ^a   Xie, Z L ^a   Lu, H ^a   Schaff, W J ^b   Song, L H ^a   Cui, Y C ^a   Hua, X M ^a   Han, P ^a   Zheng, Y D ^a   Chen, Y H ^c   Wang, Z G ^c  

^a NANJING UNIVERSITY   (China)

^b School of Operations Research and Industrial Engineering   (United States)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ABSORPTION MEASUREMENTS; BAND GAPS; ELECTRON CONCENTRATION; ELECTRON-IMPURITY; ENERGY POSITION; EXCITON LOCALIZATION; FREEZE OUT; HIGH ELECTRON CONCENTRATION; INN FILMS; LOCALIZATION EFFECT; LOCALIZED EXCITON; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE PEAK; POTENTIAL FLUCTUATIONS; POTENTIAL MINIMA; POWER RELATIONS; TEMPERATURE DEPENDENCE; THERMAL REDISTRIBUTION; VARIABLE TEMPERATURE;

ABSORPTION; CHEMICAL BEAM EPITAXY; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SEMICONDUCTOR COUNTERS;

EXCITONS;

EID: 77953540506     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-010-5594-3     Document Type: Article

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