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Volumn 51, Issue 6 PART 2, 2012, Pages

Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates

(11) Ide, Takayuki a Kawai, Yusuke a Handa, Hiroyuki a Fukidome, Hirokazu a Kotsugi, Masato b Ohkochi, Takuo b Enta, Yoshiharu c Kinoshita, Toyohiko b Yoshigoe, Akitaka d Teraoka, Yuden d Suemitsu, Maki a

a TOHOKU UNIVERSITY (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

c HIROSAKI UNIVERSITY (Japan)

d JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; EPITAXIAL GRAPHENE; LOGIC OPERATIONS; MICRO RAMAN SPECTROSCOPY; MICROFABRICATED; MICROFABRICATED SUBSTRATES; SI (1 1 1); SI(111) SUBSTRATE;

EPITAXIAL GROWTH; MICROFABRICATION; OPTICAL MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDE; SUBSTRATES;

GRAPHENE;

EID: 84863319097 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.06FD02 Document Type: Article

Times cited : (10)

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