Ambipolar behavior in epitaxial graphene-based field-effect transistors on Si substrate

Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 2, 2010, Pages

  Olac Vaw, Roman ^a   Kang, Hyun Chul ^a   Karasawa, Hiromi ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Fukidome, Hirokazu ^a,b   Suemitsu, Tetsuya ^a,b   Suemitsu, Maki ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR BEHAVIOR; DIRAC POINT; DRAIN VOLTAGE; EPITAXIAL GRAPHENE; METAL CONTACTS; MODE OF OPERATIONS; N-CHANNEL; P-TYPE; P-TYPE SI; SCHOTTKY; SI SUBSTRATES; VOLTAGE SHIFT;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; HETEROJUNCTIONS; SILICON; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955312161     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.06GG01     Document Type: Article

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