Epitaxial graphene top-gate FETs on silicon substrates

Solid-State Electronics

Volumn 54, Issue 10, 2010, Pages 1071-1075

  Kang, Hyun Chul ^a   Karasawa, Hiromi ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Fukidome, Hirokazu ^a   Suemitsu, Tetsuya ^a,b   Suemitsu, Maki ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Contact resistance; FET; Graphene; Sheet resistance; Silicon

Indexed keywords

A-THERMAL; CHANNEL CURRENTS; EPITAXIAL GRAPHENE; FET; GATE VOLTAGES; GRAPHENE SHEETS; SI (1 1 1); SI SUBSTRATES; SILICON SUBSTRATES; TOP-GATE; TRANSISTOR OPERATION;

CONTACT RESISTANCE; GRAPHENE; GRAPHITE; MESFET DEVICES; PYROLYSIS; SHEET RESISTANCE; SILICON; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955429112     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.030     Document Type: Article

References (22)

1. K.S. Novoselov Electric field effect in atomically thin carbon films Science 306 5696 2004 666 669
2. J.D. Meindl, Q. Chen, and J.A. Davis Limits on silicon nanoelectronics for terascale integration Science 293 2001 2044 2049
3. K.I. Bolotin Ultrahigh electron mobility in suspended graphene Solid State Commun 146 2008 351 355
4. S.V. Morozov Giant intrisic carrier mobilities in graphene and its bilayer Phys Rev Lett 100 1 2008 016602
5. Y.-M. Lin Operation of graphene transistors at gigahertz frequencies Nano Lett 9 1 2009 422 426
6. J.S. Moon Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates IEEE Electron Dev Lett 30 6 2009 650 652
7. R. Sordan, F. Traversi, and V. Russo Logic gates with a single graphene transistor Appl Phys Lett 94 2009 073305
8. F. Raversi, V. Russo, and R. Sordan Integrated complementary graphene inverter Appl Phys Lett 94 2009 223312
9. K.S. Kim Large-scale pattern growth of graphene films for stretchable transparent electrodes Nature 457 2009 706
10. de Heer WA, Berger C, Conrad E, First P, Murali R, Meindl J. Pionics: The emerging science and technology of graphene-based nanoelectronics. In: Electron devices meeting IEDM; 2007. p. 199-202.
11. S.Y. Zhou Substrate-induced bandgap opening in epitaxial graphene Nat Mater 6 2007 770
12. M. Suemitsu, Y. Miyamoto, H. Handa, and A. Konno Graphene formation on a 3C-SiC(1 1 1) thin film grown on Si(1 1 0) substrates E-J Surf Sci Nanotech 7 2009 311 313
13. Y. Miyamoto Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate E-J Surf Sci Nanotech 7 2009 107 109
14. H. Fukidome, Y. Miyamoto, H. Handa, E. Saito, and M. Suemitsuu Epitaxial growth processes of graphene on silicon substrates Jpn J Appl Phys 49 2010 01AH03
15. Kang HC et al. Epitaxial graphene field effect transistors on silicon substrates. In: 39th European solid state device research conference (ESSDERC 2009); 2009. p. 189-192.
16. H.C. Kang Extraction of drain current and effective mobility in epitaxial graphene channel FETs on silicon substrates Jpn J Appl Phys 49 2010 04DF17
17. Olac-vaw R et al. Ambipolar behavior in epitaxial graphene based field-effect transistors on Si substrate. In: 22nd Microprocesses and nanotechnology conference (MMC 2009); 2009. p. 440-451.
18. H. Nakazawa, and M. Suemitsu Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(0 0 1) substrate using organosilane buffer layer J Appl Phys 93 2003 5282 5286
19. U. Starke, and C. Riedl Epitaxial graphene on SiC (0 0 0 1 ̄) and SiC(0 0 0): from surface reconstructions to carbon electronics J Phys: Condens Mater 21 2009 134016
20. A. Javey, R. Tu, D.B. Farmer, J. Guo, R.G. Gordon, and H. Dai High performance n-type carbon nanotube field-effect transistors with chemically doped contacts Nano Lett 5 2 2005 345 348
21. P. Avouris, J. Appenzeller, R. Martel, and S.J. Wind Carbon nanotube electronics Proc of IEEE 91 2003 1772 1784 [special issue]
22. S.J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes Appl Phys Lett 80 20 2002 3817 3819