Graphene/SiC/Si FETs with SiCN gate stack

ECS Transactions

Volumn 41, Issue 6, 2011, Pages 249-254

  Suemitsu, T ^a   Kubo, M ^a   Handa, H ^a   Takahashi, R ^a   Fukidome, H ^a   Suemitsu, M ^a,b   Otsuji, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; HYDROGEN; LOGIC GATES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON CARBIDE; SILICON NITRIDE; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

AMBIPOLAR CHARACTERISTICS; CARRIER GAS; CHANNEL MATERIALS; CLEANING EFFECT; HEXAMETHYLDISILAZANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); SI SUBSTRATES; SIC SUBSTRATES;

GRAPHENE TRANSISTORS;

EID: 84857271056     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3629973     Document Type: Conference Paper

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