Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate

e-Journal of Surface Science and Nanotechnology

Volumn 7, Issue , 2009, Pages 311-313

  Suemitsu, Maki ^a,b   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Konno, Atsushi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Graphite; Molecular beam epitaxy; Raman scattering spectroscopy; Silicon; Silicon carbide

Indexed keywords

GAS SOURCE MOLECULAR BEAM EPITAXY; GRAPHENE; GRAPHITE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICON; SILICON CARBIDE; THIN FILMS;

BULK SUBSTRATES; EPITAXIAL GRAPHENE; GRAPHENE FILMS; RAMAN SCATTERING SPECTROSCOPY; SI(110) SUBSTRATE; SIC SUBSTRATES; UHV ANNEALING; VIRTUAL SUBSTRATES;

SUBSTRATES;

EID: 68049126257     PISSN: None     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2009.311     Document Type: Conference Paper

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