Epitaxial growth processes of graphene on silicon substrates

Japanese Journal of Applied Physics

Volumn 49, Issue 1 Part 2, 2010, Pages

  Fukidome, Hirokazu ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a,b   Salto, Eiji ^a,b   Suemitsu, Maki ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION; EPITAXIALLY GROWN; GRAPHENE GROWTH; IN-BETWEEN; PROCESS PARAMETERS; SIC THIN FILMS; SILICON SUBSTRATES; STRUCTURAL CHARACTERIZATION;

DEFECTS; GRAPHENE; GRAPHITE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950800343     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.01AH03     Document Type: Article

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