Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate

e-Journal of Surface Science and Nanotechnology

Volumn 7, Issue , 2009, Pages 107-109

  Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Saito, Eiji ^a   Konno, Atsushi ^a   Narita, Yuzuru ^b   Suemitsu, Maki ^a,c   Fukidome, Hirokazu ^c   Ito, Takashi ^a   Yasui, Kanji ^d   Nakazawa, Hideki ^e   Endoh, Tetsuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b YAMAGATA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^e HIROSAKI UNIVERSITY   (Japan)

Author keywords

Gas source MBE; Graphene; Heteroepitaxy; Organosilane; Silicon carbide

Indexed keywords

EPITAXIAL GROWTH; RAMAN SCATTERING; SILICON CARBIDE; SUBSTRATES; ULTRATHIN FILMS;

EPITAXIAL GRAPHENE; GAS-SOURCE MBE; GRAPHENE LAYERS; ORGANOSILANES; PEAK POSITION; RAMAN SCATTERING SPECTRA; RAMAN SCATTERING SPECTROSCOPY; VACUUM-ANNEALING;

GRAPHENE;

EID: 61449154422     PISSN: None     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2009.107     Document Type: Article

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