Temperature-programmed desorption observation of graphene-on-silicon process

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Abe, Shunsuke ^a   Handa, Hiroyuki ^a   Takahashi, Ryota ^a   Imaizumi, Kei ^a   Fukidome, Hirokazu ^a   Suemitsu, Maki ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; EPITAXIAL GRAPHENE; GROWTH MECHANISMS; IN-SITU; SI (1 1 1); SI(1 0 0); SI(110); SIC THIN FILMS; SILICON SUBSTRATES; SURFACE ATOMS; SURFACE STOICHIOMETRY;

DEUTERIUM; GRAPHENE; SILICON; SILICON CARBIDE; STOICHIOMETRY; SURFACE CHEMISTRY; TEMPERATURE PROGRAMMED DESORPTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960696494     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070102     Document Type: Article

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