Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Ryzhii, V ^a,d   Ryzhii, M ^a,d   Satou, A ^b,d   Otsuji, T ^b,d   Mitin, V ^c  

^a UNIVERSITY OF AIZU   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c State University of New York ^*  (United States)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; APPLIED VOLTAGES; BACK- AND TOP-GATE; BI-LAYER; DEVICE MODELS; DRAIN-INDUCED BARRIER LOWERING; ELECTRON COLLISION; ELECTRON TRANSPORT; GEOMETRICAL PARAMETERS; LIMITING CASE; NON-MONOTONIC DEPENDENCE; NONLOCALITIES; PARAMETERS CHARACTERIZING; POTENTIAL DISTRIBUTIONS; SOURCE-DRAIN CURRENT; TOP-GATE;

ANALYTIC EQUIPMENT; BOLTZMANN EQUATION; DRAIN CURRENT; GRAPHENE; MESFET DEVICES; POISSON EQUATION; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 79953647518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3560921     Document Type: Article

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