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Volumn 109, Issue 6, 2011, Pages

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; APPLIED VOLTAGES; BACK- AND TOP-GATE; BI-LAYER; DEVICE MODELS; DRAIN-INDUCED BARRIER LOWERING; ELECTRON COLLISION; ELECTRON TRANSPORT; GEOMETRICAL PARAMETERS; LIMITING CASE; NON-MONOTONIC DEPENDENCE; NONLOCALITIES; PARAMETERS CHARACTERIZING; POTENTIAL DISTRIBUTIONS; SOURCE-DRAIN CURRENT; TOP-GATE;

EID: 79953647518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3560921     Document Type: Article
Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.