Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1471-1477

  Ohmi, Tadahiro ^a   Teramoto, Akinobu ^a   Kuroda, Rihito ^a   Miyamoto, Naoto ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

CMOSFET circuits; Metal insulator semiconductor (MIS) devices; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; FILM THICKNESS; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

ATOMIC-ORDER FLAT-GATE INSULATOR FILM/SILICON DRAIN ELECTRODES; DIRECT NITRADATION FILMS; GATE INSULATOR FILM THICKNESS; RADICAL-REACTION-BASED SEMICONDUCTOR MANUFACTURING; THERMAL OXIDE FILMS;

MISFET DEVICES;

EID: 34249868191     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.896391     Document Type: Article

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