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Nanoscale Research Letters

Volumn 5, Issue 12, 2010, Pages 1888-1891

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

(6) Abe, Shunsuke a Handa, Hiroyuki a Takahashi, Ryota a Imaizumi, Kei a Fukidome, Hirokazu a Suemitsu, Maki a,b

a TOHOKU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

3C SiC(111); Epitaxy; Graphene; Si(111); Surface termination

Indexed keywords

3C-SIC(111); EPITAXY; GRAPHENES; SI (1 1 1); SURFACE TERMINATION;

CAPILLARITY; DEUTERIUM; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAPHENE; GRAPHITE; GRAPHITIZATION; SILICON; SILICON CARBIDE; SURFACE CHEMISTRY; TEMPERATURE PROGRAMMED DESORPTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649733271 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-010-9731-x Document Type: Article

Times cited : (24)

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