Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Kang, Hyun Chul ^a   Roman, Olac Vaw ^a   Karasawa, Hiromi ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Suemitsu, Tetsuya ^a,b   Fukidome, Hirokazu ^a,b   Suemitsu, Maki ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; BACKGATE VOLTAGE; BULK SILICON; CHANNEL CURRENTS; EFFECTIVE MOBILITIES; EPITAXIAL GRAPHENE; GATE INSULATOR; GATE-LEAKAGE CURRENT; SI SUBSTRATES; SIC SUBSTRATES; SILICON SUBSTRATES; THERMAL DECOMPOSITIONS;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; PHOTORESISTS; PYROLYSIS; SILICON; SILICON CARBIDE; SUBSTRATES; THERMOGRAVIMETRIC ANALYSIS; ULTRAHIGH VACUUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952698558     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DF17     Document Type: Article

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