Relaxation of strained silicon on Si0.5 Ge0.5 virtual substrates

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

  Parsons, J ^a   Morris, R J H ^a   Leadley, D R ^a   Parker, E H C ^a   Fulgoni, D J F ^b   Nash, L J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b AdvanceSis Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON; STACKING FAULTS;

COMPRESSIVE STRAINS; CRITICAL THICKNESSES; DISLOCATION GLIDING; HIGH RESOLUTION X-RAY DIFFRACTION; MICROTWINS; STACKING FAULTING; STRAINED SILICON; TENSILE STRAINED LAYERS; TENSILE-STRAINED SILICON; VIRTUAL SUBSTRATES;

MOSFET DEVICES;

EID: 50249131145     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975188     Document Type: Article

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