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Volumn , Issue , 2010, Pages 181-182
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8Å Tinv gate-first dual channel technology achieving low-V t high performance CMOS
a a,b a,c a a a a a a a a a a,d a a a a a a a more.. |
Author keywords
CMOS; Dual channel; Low EOT; Low Vt; SiGe
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Indexed keywords
CMOS;
DUAL CHANNEL;
LOW EOT;
LOW VT;
SIGE;
HOLE MOBILITY;
SILICON ALLOYS;
DIELECTRIC MATERIALS;
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EID: 77957861097
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/VLSIT.2010.5556219 Document Type: Conference Paper |
Times cited : (37)
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References (7)
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