High-speed Germanium-on-SOI lateral PIN photodiodes

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2547-2549

  Dehlinger, G ^a   Koester, S J ^b   Schaub, J D ^b   Chu, J O ^b   Ouyang, Q C ^b   Grill, A ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; OPTIMIZATION; PHOTOCURRENTS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY;

DARK CURRENTS; HIGH SPEED GERMANIUM; PHOTODETECTOR FABRICATION;

PHOTODIODES;

EID: 7744243121     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835631     Document Type: Article

References (12)

1. S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, "High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed buffers," [i Appl. Phys. Lett. i], vol. 73, no. 15, pp. 2125-2127, Oct. 1998.
2. S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, "High performance germanium-on-silicon detectors for optical communications," [i Appl. Phys. Lett. i], vol. 81, no. 4, pp. 586-588, July 2002.
3. J. Oh, S. Csutak, and J. C. Campbell, "High-speed interdigitated Ge PIN photodetectors," [i IEEE Photon. Technol. Lett. i], vol. 14, pp. 369-371, Mar. 2002.
4. E. D. Palik, [i Handbook of Optical Constants of Solids II i]. Boston, MA: Academic, 1991.
5. G. Dehlinger, J. D. Schaub, J. O. Chu, S. J. Koester, Q. C. Ouyang, and A. Grill, "High speed lateral PIN germanium-on-silicon photodetectors," presented at the 1st Int. SiGe Technology and Device Meeting, Nagoya, Japan, Jan. 15-17, 2003.
6. B. Cunningham, J. O. Chu, and S. Akbar, "Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition," [i Appl. Phys. Lett. i], vol. 59, no. 27, pp. 3574-3576, Dec. 1991.
7. L. Colace, M. Gianlorenzo, and A. Gaetano, "Ge-on-Si approaches to the detection of near-infrared light," [i IEEE J. Quantum Electron. i], vol. 35, pp. 1843-1852, Dec. 1999.
8. H.-C. Luan [i et al. i], "High-quality Ge epilayers on Si with low threading-dislocation densities," [i Appl. Phys. Lett. i], vol. 75, no. 19, pp. 2909-2911, Nov. 1999.
9. E. Hecht and A. Zajac, [i Optics. i] Reading, MA: Addison-Wesley, 1974, ch. 6.
10. J. D. Schaub, R. Li, C. L. Schow, J. C. Campbell, G. W. Neudeck, and J. Denton, "Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth," [i IEEE Photon. Technol. Lett. i], vol. 11, pp. 1647-1649, Dec. 1999.
11. M. V. Fischetti and S. E. Laux, "Band structure, deformafion potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," [i J. Appl. Phys. i], vol. 80, no. 4, pp. 2234-2252, Aug. 1996.
12. M. Yang [i et al. i], "A high-speed, high-sensitivity silicon lateral trench photodetector," [i IEEE Electron Device Lett. i],