Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1366-1372

  Griglione, Michelle ^a   Anderson, Timothy J ^a   Haddara, Yaser M ^b   Law, Mark E ^a   Jones, Kevin S ^a   Van Den Bogaard, Alex ^c  

^a University of Florida   (United States)

^b CYPRESS SEMICONDUCTOR   (United States)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000233890     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373825     Document Type: Article

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