Self-diffusion of 71Ge in Si-Ge

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 542-545

  Strohm, A ^a   Voss, T ^b   Frank, W ^a,b   Raisanen J ^c   Dietrich, M ^d  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^d SAARLAND UNIVERSITY   (Germany)

Author keywords

71Ge self diffusion; Radiotracer technique; Si Ge epi layers; Transition from interstitialcy to vacancy mechanism

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTRON TRANSITIONS; ENTHALPY; ION IMPLANTATION; SINGLE CRYSTALS;

MONOCRYSTALLINE EPI-LAYERS; RADIOTRACER TECHNIQUE;

SEMICONDUCTING GERMANIUM;

EID: 0035678565     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00814-6     Document Type: Article

References (10)