Embedded source/drain SiGe stressor devices on SOI: Integrations, performance, and analyses

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3020-3024

  Zhang, Da ^a,b   White, Ted ^b   Nguyen, Bich Yen ^a,b  

^a IEEE   (United States)

^b FREESCALE SEMICONDUCTOR   (United States)

Author keywords

Embedded source drain (S D) stressor; In situ doping; Mobility enhancement; SiGe epitaxy; Silicon on insulator (SOI); Strain

Indexed keywords

EMBEDDED SOURCE/DRAIN (S/D) STRESSORS; IN SITU DOPING; MOBILITY ENHANCEMENT; SIGE EPITAXY;

CRYSTAL GROWTH; EMBEDDED SYSTEMS; IN SITU PROCESSING; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

SEMICONDUCTOR DEVICES;

EID: 33947239840     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885534     Document Type: Article

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