Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 8, 2009, Pages 1775-1779

  Meduna M ^a   Caha, O ^a   Keplinger, M ^b   Stangl, J ^b   Bauer, G ^b   Mussler, G ^b   Grutzmacher D ^c  

^a MASARYK UNIVERSITY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION PARAMETERS; DIFFUSION PROPERTIES; ELEVATED TEMPERATURE; GE CONTENT; IN-SITU ANNEALING; IN-SITU DIFFRACTION; INTENSITY MAPS; INTER-DIFFUSION; MULTIPLE QUANTUM-WELL STRUCTURES; RECIPROCAL LATTICE POINTS; RECIPROCAL SPACE MAPPING; RECIPROCAL SPACE MAPS; RELAXED SIGE; SI (001) SUBSTRATE; X- RAY DIFFRACTION;

CRYSTAL GROWTH; DIFFRACTION; GERMANIUM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 68649101182     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881595     Document Type: Conference Paper

References (17)

1. D. Paul, Phys. World 13, 27 (2000).
2. S. Tsujino, A. Borak, E. Müller, M. Scheinert, C. V. Falub, H. Sigg, D. Grützmacher, M. Giovannini, and J. Faist, Appl. Phys. Lett. 86, 62113 (2005).
3. H. von Känel, M. Kummer, G. Isella, E. Muüller, and T. Hackbarth, Appl. Phys. Lett. 80, 2922 (2002).
4. F. Schäffler, Thin Solid Films 321, 1 (1998).
5. M. Miyao, K. Nakagawa, N. Sugii, and S. Yamaguchi, Microelectron. Eng. 47, 221 (1999).
6. G. M. Xia, J. L. Hoyt, and M. Canonico, J. Appl. Phys. 101, 44901 (2007).
7. N. R. Zangenberg, J. L. Hansen, J. Fage-Pedersen, and A. N. Larsen, Phys. Rev. Lett. 87, 125901 (2001).
8. D. B. Aubertine and P. C. McIntyre, J. Appl. Phys. 97, 13531 (2005).
9. N. Ozguven and P. C. McIntyre, Appl. Phys. Lett. 92, 181907 (2008).
10. M. Medǔna, J. Nov́ak, G. Bauer, C. V. Falub, and D. Gr̈utzmacher, Phys. Status Solidi A 205, 2441 (2008).
11. B. Tuck, Introduction to Diffusion in Semiconductors, IEE Monograph Series 16 (Peter Peregrinus Ltd., Stevenage, 1974).
12. Y. Okada and Y. Tokumaru, J. Appl. Phys. 56, 314 (1984).
13. M. Medǔna, J. Nov́ak, G. Bauer, V. Hoĺy, C. V. Falub, S. Tsujino, and D. Grützmacher, Semicond. Sci. Technol. 22, 447 (2007).
14. V. M. Kaganer, R. Köhler, M. Schmidbauer, R. Opitz, and B. Jenichen, Phys. Rev. B 55, 1793 (1997).
15. D. Gupta (ed.), Diffusion Processes in Advanced Technological Materials (Springer, New York, 2005).
16. V. Holy, U. Pietsch, and T. Baumbach, High-Resolution X-Ray Scattering from Thin Films and Multilayers (Springer, Berlin, 1999).
17. M. Meduňa, J. Nov́ak, C. V. Falub, G. Chen, G. Bauer, S. Tsujino, D. Grützmacher, E. Müller, Y. Campidelli, O. Kermarrec, D. Bensahel, and N. Schell, J. Phys. D, Appl. Phys. 38, A121 (2005).