Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis

Ultramicroscopy

Volumn 117, Issue , 2012, Pages 15-23

  Grieb, Tim ^a   Müller, Knut ^a   Fritz, Rafael ^b   Schowalter, Marco ^a   Neugebohrn, Nils ^a   Knaub, Nikolai ^b   Volz, Kerstin ^b   Rosenauer, Andreas ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

GaNAs; HAADF; Static atomic displacements; STEM; Strain state analysis

Indexed keywords

ATOMIC DISPLACEMENT; GANAS; HAADF; STEM; STRAIN STATE;

GALLIUM ALLOYS; GALLIUM NITRIDE; SCATTERING; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATOMS;

ARSENIC ACID; GALLIUM; NITROGEN;

ARTICLE; ATOM; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; ELECTRON BEAM; HIGH ANGLE ANNULAR DARK FIELD IMAGING; MATHEMATICAL ANALYSIS; NITROGEN CONCENTRATION; QUANTUM MECHANICS; RADIATION FIELD; RADIATION SCATTERING; RADIOASSAY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SCINTISCANNING; SIMULATION; STRAIN STATE ANALYSIS; SURFACE STRESS; THERMAL DIFFUSION;

EID: 84861331594     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2012.03.014     Document Type: Article

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