Atomic scale annealing effects on InxGa1-xN yAs1-y studied by TEM three-beam imaging

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 4, 2011, Pages

  Müller, Knut ^a   Schowalter, Marco ^a   Rosenauer, Andreas ^a   Hu, Dongzhi ^b   Schaadt, Daniel M ^b   Hetterich, Michael ^b   Gilet, Philippe ^c   Rubel, Oleg ^d,e,f   Fritz, Rafael ^f   Volz, Kerstin ^f  

^a UNIVERSITY OF BREMEN   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c CEA LETI   (France)

^d Thunder Bay Regional Research Institute   (Canada)

^e LAKEHEAD UNIVERSITY   (Canada)

^f PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961202875     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.045316     Document Type: Article

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