The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys

Philosophical Magazine

Volumn 84, Issue 20, 2004, Pages 2055-2074

  Glas, Frank ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL LATTICES; ELECTRON MICROSCOPY; PARAMETER ESTIMATION; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAYS;

CONVERGENT-BEAM ELECTRON DIFFRACTION (CBED); CRYSTAL POTENTIAL; LATTICE FRINGE ANALYSIS; STATIC ATOMIC DISPLACEMENTS;

SEMICONDUCTOR MATERIALS;

EID: 3142647680     PISSN: 14786435     EISSN: None     Source Type: Journal    
DOI: 10.1080/14786430410001678244     Document Type: Article

References (35)

1. BAXTER, C. S., STOBBS, W. M., MONSERRAT, K. J., and TOTHILL, J. N., 1988, Analytical Electron Microscopy Workshop, Institute of Metals Book 425, edited by G. W. Lorimer (London: Institute of Metals), pp. 209-213.
2. BUYANOVA, I. A., CHEN, W. M., and MONEMAR, B., 2001, Mater. Res. Soc. Internet J. Nitride Semicond. Res., 6, 2; http://nsr.mij.mrs.org/.
3. CAGNON, J., BUFFAT, P. A., STADELMANN, P. A., and LEIFER, K., 2001, Microscopy of semiconducting Materials 2001, Institute of Physics Conference Series, Vol. 169, edited by A. G. Cullis and J. L. Hutchison (Bristol: Institute of Physics), pp. 37-40.
4. COWLEY, J. M., 1975, Diffraction Physics (Amsterdam: North-Holland), p. 253.
5. DOYLE, P. A., and TURNER, P. S., 1968, Acta crystallogr. A, 24, 390.
6. GLAS, F., 1989, Evaluation of Advanced Semiconductor Materials by Electron Microscopy, NATO Advanced Study Institute Series, Series B, Vol. 203, edited by D. Cherns (New York: Plenum), pp. 217-232; 1993, Acta crystallogr. A, 49, 220; 1994, Phil. Mag. Lett., 69, 269; 1995a, Phys. Rev. B, 51, 825; 1995b, Ultramicroscopy, 60, 91.
7. GLAS, F., 1989, Evaluation of Advanced Semiconductor Materials by Electron Microscopy, NATO Advanced Study Institute Series, Series B, Vol. 203, edited by D. Cherns (New York: Plenum), pp. 217-232; 1993, Acta crystallogr. A, 49, 220; 1994, Phil. Mag. Lett., 69, 269; 1995a, Phys. Rev. B, 51, 825; 1995b, Ultramicroscopy, 60, 91.
8. GLAS, F., 1989, Evaluation of Advanced Semiconductor Materials by Electron Microscopy, NATO Advanced Study Institute Series, Series B, Vol. 203, edited by D. Cherns (New York: Plenum), pp. 217-232; 1993, Acta crystallogr. A, 49, 220; 1994, Phil. Mag. Lett., 69, 269; 1995a, Phys. Rev. B, 51, 825; 1995b, Ultramicroscopy, 60, 91.
9. GLAS, F., 1989, Evaluation of Advanced Semiconductor Materials by Electron Microscopy, NATO Advanced Study Institute Series, Series B, Vol. 203, edited by D. Cherns (New York: Plenum), pp. 217-232; 1993, Acta crystallogr. A, 49, 220; 1994, Phil. Mag. Lett., 69, 269; 1995a, Phys. Rev. B, 51, 825; 1995b, Ultramicroscopy, 60, 91.
10. GLAS, F., 1989, Evaluation of Advanced Semiconductor Materials by Electron Microscopy, NATO Advanced Study Institute Series, Series B, Vol. 203, edited by D. Cherns (New York: Plenum), pp. 217-232; 1993, Acta crystallogr. A, 49, 220; 1994, Phil. Mag. Lett., 69, 269; 1995a, Phys. Rev. B, 51, 825; 1995b, Ultramicroscopy, 60, 91.
11. GLAS, F., GORS, C., and HÉNOC, P., 1990, Phil. Mag. B, 62, 373.
12. GRILLE, H., SCHNITTLER, C., and BECHSTEDT, F., 2000, Phys. Rev. B, 61, 6091.
13. GRILLO, V., ALBRECHT, M., REMMELE, T., STRUNK, H. P., EGOROV, A. Y., and RIECHERT, H., 2001, J. appl. Phys., 90, 3792.
14. HALL, P. J., 1985, J. Mater. Sci. Lett., 4, 1002.
15. HIRATSUKA, K., 1991, Phil. Mag. B, 63, 1087.
16. KEATING, P. N., 1966, Phys. Rev., 145, 637.
17. MADELUNG, O. (editor), 1982, Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 17b (New York: Springer).
18. MARTIN, R. M., 1970, Phys. Rev. B, 1, 4005.
19. MIKKELSEN, J. C., JR, and BOYCE, J. B., 1983, Phys. Rev. B, 28, 7130.
20. MOTT, N. F., and MASSEY, H. S. W., 1949, The Theory of Atomic Collisions (Oxford: Clarendon), p. 120.
21. OU, H. J., COWLEY, J. M., CHYI, J. I., SALVADOR, A., and MORKOÇ, H., 1990, J. appl. Phys., 67, 698.
22. PATRIARCHE, G., LARGEAU, L., HARMAND, J. C., and GOLLUB, D., 2004, Appl. Phys. Lett., 84, 203.
23. PETKOV, V., JEONG, I.-K., CHUNG, J. S., THORPE, M. F., KYCIA, S., and BILLINGE, S. J. L., 1999, Phys. Rev. Lett., 83, 4089.
24. PETROFF, P. M., 1977, J. vac. Sci. Technol., 14, 973.
25. PODGIÓRNY, M., CZYŻK, M. T., BALZAROTTI, A., LETARDI, P., MOTTA, N., KISIEL, A., and ZIMNAL-STARNAWSKA, M., 1985, Solid St. Commun., 55, 413.
26. REZ, D., REZ, P., and GRANT, I., 1994, Acta crystallogr. A, 50, 481.
27. ROSENAUER, A., FISCHER, U., GERTHSEN, D., and FÖRSTER, A., 1998, Ultramicroscopy, 72, 121.
28. SU, Z., and COPPENS, P., 1997, Acta crystallogr. A, 53, 749; 1998, ibid., 54, 357.
29. SU, Z., and COPPENS, P., 1997, Acta crystallogr. A, 53, 749; 1998, ibid., 54, 357.
30. TREACY, M. M. J., GIBSON, J. M., and HOWIE, A., 1985, Phil. Mag. A, 51, 389.
31. UNO, T., OKANO, T., and YUKINO, K., 1970, J. phys. Soc. Japan, 28, 437.
32. WATANABE, K., HIRATSUKA, K., and YAMAGUCHI, H., 1991, Phil. Mag. A, 64, 81.
33. WEICKENMEIER, A., and KOHL, H., 1991, Acta crystallogr. A, 47, 590.
34. YEH, C.-Y., CHEN, A.-B., and SHER, A., 1990, Phys. Rev. B, 43, 9138.
35. ZUO, J. M., SPENCE, J. C. H., and O'KEEFE, M., 1988, Phys. Rev. Lett., 61, 353.