High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

Microscopy and Microanalysis

Volumn 14, Issue SUPPL. 2, 2008, Pages 318-319

  Herrera, M ^a   Ramasse, Q ^b   Browning, N D ^a,c   Pizarro, J ^d   Galindo, P L ^d   Gonzalez, D ^d   Garcia, R ^d   Du, M W ^e   Zhang, S B ^f   Hopkinson, M ^g  

^a University of California Davis   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF CÁDIZ   (Spain)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

^f Rensselaer Polytechnic Institute   (United States)

^g UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49549095136     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927608082329     Document Type: Conference Paper

References (3)

1. M. Kondow et al., Jpn. J. Appl. Phys. (1996) 35, 1273.
2. S. G. Spruytte et al., J. Appl. Phys. (2001) 89, 4401.
3. This work was supported by a grant from the European Union under contract MOIF-CF-2006-21423 and in part by DOE grant number DE-FG02-03ER46057.