Strain state analysis of InGaN/GaN - Sources of error and optimized imaging conditions

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 176-184

  Rosenauer, A ^a   Gerthsen, D ^b   Potin, V ^c  

^a UNIVERSITY OF BREMEN   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c UNIVERSITÉ DE BOURGOGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DELOCALIZATION EFFECT; LATTICE PLANE; SIMULATED IMAGES; SPECIMEN THICKNESS;

ERROR ANALYSIS; FINITE ELEMENT METHOD; GALLIUM NITRIDE; LENSES; OPTIMIZATION; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31144471616     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563519     Document Type: Conference Paper

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