Determination of thickness and lattice distortion for the individual layer of strained Al0.14Ga0.86NGaN superlattice by high-angle annular dark-field scanning transmission electron microscopy

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Shiojiri, M ^a,e   Ceh M ^b   Sturm S ^b   Chuo, C C ^c   Hsu, J T ^c   Yang, J R ^d   Saijo, H ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e Kyoto Institute of Technology ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; INTERFACES (MATERIALS); LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; THICKNESS MEASUREMENT;

GAN LAYERS; GAN-BASED LASER DIODES; LATTICE DISTORTION; STRAINED-LAYER SUPERLATTICES;

SUPERLATTICES;

EID: 24144488223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1995952     Document Type: Article

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